| 摘要 |
An image sensor having high sensitivity and transfer characteristics and its manufacturing method are provided to prevent generation of a potential dip between a photo diode region and a junction region of a transfer transistor by superposing a pinning layer of a pined photo diode with a gate electrode of the transfer transistor. A pinned photo diode(PD) includes a junction structure of a first conductive type photo diode region and a second conductive type pinning region. The first conductive type has a polarity opposite to that of the second conductive type. The second conductive type pinning region includes first and second pinning regions(26,28) which are contacted to each other horizontally. The first pinning region has a length of d. The second pinning region is extended from a junction with the first pinning region to have a length of e. The first conductive type photo diode region includes first and second photo diode regions(22,24) which are contacted to each other vertically. The first photo diode region is contacted to a lower of the pinning region to have a length of b. The second photo diode region is contacted to a lower of the first photo diode region to have a length of c. Relationships of d+e=a and a>b>d>c are satisfied.
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