METHOD OF MANUFACTURING A OXIDE FILM OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing an insulating layer of a semiconductor device is provided to improve dielectric constant of overall dielectric and electrical characteristic by forming an oxide layer between a semiconductor layer and a first dielectric through a thermal oxidation process. A first dielectric(302) is formed on an upper portion of a semiconductor layer(300). A second dielectric is formed between the semiconductor layer and the first dielectric. The semiconductor layer is a silicon layer. The first dielectric is a silicon nitride layer formed by implanting nitrogen gas into a process chamber where plasma argon gases exist. A micro wave makes the argon gas in a plasma state. The second dielectric is an oxide layer formed by performing a thermal oxidation process on the semiconductor layer where the first dielectric layer is formed. Oxygen gas and hydrogen gas are used in the thermal oxidation process.