SEMICONDUCTOR WAFER HAVING A SILICON-GERMANIUM LAYER, AND A METHOD FOR ITS PRODUCTION,申请号KR20060001199-传众专利搜索

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发明名称	SEMICONDUCTOR WAFER HAVING A SILICON-GERMANIUM LAYER, AND A METHOD FOR ITS PRODUCTION
摘要
申请公布号	KR100742680(B1)	申请公布日期	2007.07.25
申请号	KR20060001199	申请日期	2006.01.05
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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