| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve linewidth uniformity of a recess gate pattern and a process margin by performing two exposure processes and one developing process to form the recess gate pattern. A hard mask layer(110) and a photoresist layer are formed on an upper portion of a semiconductor substrate(100). The hard mask layer is made of a poly silicon layer. A first exposure process using a first exposure mask and a second exposure process using a second exposure mask are performed to expose a recess gate forming region. A developing process is performed to form a photoresist layer pattern for defining a recess gate region(125). The hard mask layer and the semiconductor substrate are etched by using the photoresist layer pattern to form the recess gate region. The first exposure mask is formed in a line/space shape.</p> |
