COMPOUND FOR PHOTORESIST, PHOTORESIST COMPOSITION HAVING THE COMPOUND AND METHOD OF FORMING A PHOTORESIST PATTERN USING THE PHOTORESIST COMPOSITION

摘要

Provided are a photoresist compound for producing a fine pattern and reducing roughness of linewidth, a photoresist composition having the same compound and a method for forming a photoresist pattern using the photoresist composition. The photoresist compound is represented by the formula(1) or (2). In the formulae, R1 is a residue of a triol compound in which a hydrogen atom of hydroxyl group is removed, R2, R3 and R4 are residues of a dicarboxylic acid compound in which a hydrogen atom of carboxy group is removed, R5, R6 and R7 are independently t-butyl group, tetrahydropyranyl group or 1-ethoxyethyl group, X1 to X6 are independently hydrogen atom or hydroxyl group, R8 is a residue of tricarboxylic acid compound in which hydrogen atom of a carboxyl group is removed. The photoresist composition comprises a non-linear low molecular weight compound, a photoresist and an organic solvent. The photoresist composition can produce a fine pattern with a resolution of a molecular level due to small building block size.