| 摘要 |
Provided are a photoresist polymer comprising a silicon-based compound, a composition comprising the photoresist polymer and a method for forming a photoresist micro pattern using the photoresist composition without collapse of the pattern in the photolithography process of a semiconductor device. The photoresist polymer includes a repeating unit of a monomer of the formula(1) and a monomer of the formula(2), in which R is hydrogen or methyl, R1 is a C3~C10 straight or branched alkylene, R2, R3 and R4 are each a C1~C3 alkoxy, R5 is hydrogen or methyl, R6 - R9 are a C1~C5 straight or branched alkyl. The polymer includes 65 to 140 weight parts of the monomer of the formula(2) based on the 100 weight parts of the monomer of the formula(1) and to the monomer of the formula(2). The photoresist composition includes the photoresist polymer, a photoacid generator and an organic solvent. The photoresist composition is additionally applied as a second photoresist layer on a first photoresist layer to prevent pattern collapse.
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