| 摘要 |
<p>A method for forming an overlay mark of a semiconductor device is provided to improve accuracy of an overlay measurement by using an LSA(Laser Scattering alignment) manner. Vernier patterns(102,104) of a dot pattern are repetitively formed on a semiconductor substrate. A laser beam is irradiated onto the semiconductor substrate by using an LSA manner to measure a diffraction light generated from the vernier patterns. First and second detected signals(B,C) corresponding to the diffraction light are processed to measure an overlay. The first detected signal is detected at a first level of a first vernier pattern and the second detected signal is detected at a second level of a second vernier patter. The overlay is measured by using a value of which a layout distance is subtracted from a measurement distance between the first and second detected signals.</p> |
