发明名称 |
Ferroelectric capacitor, process for production thereof and semiconductor device using the same |
摘要 |
A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.
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申请公布号 |
US7247504(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20040024873 |
申请日期 |
2004.12.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
MATSUURA OSAMU;MARUYAMA KENJI;TAKAI KAZUAKI |
分类号 |
C23C14/08;H01L21/00;C23C16/40;G01Q30/04;G01Q30/10;G01Q70/04;G01Q70/14;H01L21/02;H01L21/316;H01L21/8246;H01L27/105;H01L27/115 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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