FLASH MEMORY DEVICE AND ERASE METHOD THEREOF

摘要

A flash memory device and an erase method thereof are provided to variably control the number of memory cells, which are simultaneously programmed during a post-program operation. According to a method for post-programming a flash memory device, memory cells of a selected word line are post-programmed by a predetermined unit. After an address is increased to select a next word line, it is judged whether the increased address coincides with one of reference addresses. Whenever the increased address coincides with one of the reference addresses, the unit of post-programming of the selected memory cells is changed.