| 摘要 |
A semiconductor apparatus, and a method for manufacturing the same are provided to prevent a drain current of a MOSFET from being lowered using two dielectric layers whose intrinsic stresses are different from each other. A semiconductor apparatus includes a semiconductor substrate(10), a trench(26) on the semiconductor substrate, and at least two MOSFET(30,40) between which the trench is sandwiched. A first dielectric layer forming process is performed so that a first dielectric layer(16) having an intrinsic stress in a preset direction is formed within the trench. Then, a second dielectric layer forming process is performed so that a second dielectric layer(15,15a,15b) having another intrinsic stress in another direction which is opposite to the preset direction is formed between the first dielectric layer and an inner wall of the trench. The second dielectric layer forming process includes the steps of arranging a dielectric layer within the trench and performing a chemical reaction process onto a portion of the dielectric layer to change a dimension of the intrinsic stress of the dielectric layer.
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