发明名称 Semiconductor device including an improved capacitor and method for manufacturing the same
摘要 In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on the upper portion of the cylindrical storage conductive layer pattern. The connecting member connects to an adjacent connecting member of another storage electrode. A dielectric layer and a plate electrode are successively formed on the storage electrode. All of the capacitors are connected by one another by forming cylindrical storage electrodes so that the storage electrode does not fall down when the capacitors have an extremely large aspect ratio. Thus, the capacitance of the capacitors may be improved to the desired level. A semiconductor device that includes these capacitors may have improved reliability and the throughput of a semiconductor manufacturing process may be increased.
申请公布号 US7247537(B2) 申请公布日期 2007.07.24
申请号 US20040000782 申请日期 2004.11.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JE-MIN
分类号 H01L21/8242;H01L21/02;H01L21/311;H01L21/768;H01L27/02;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址