METHOD FOR FORMING SOURCE/DRAIN REGION OF THE SEMICONDUCTOR DEVICE

摘要

A method for forming a source/drain region of a semiconductor device is provided to reduce a junction leakage at the edge of an isolation layer by performing an ion implantation at a tilt corresponding to the slope of an isolation layer in forming a source/drain region. After an insulation layer and a polysilicon layer are deposited on a semiconductor substrate(100) having an isolation layer(102), an etch process is performed to form a gate electrode(106). A low-density ion implantation process is performed by using the gate electrode as an ion implantation mask to form an LDD region. After an insulation material is deposited on the resultant structure, the insulation material is dry-etched to form a spacer(108) on the sidewall of the gate electrode. A high-density ion implantation process is performed by using the spacer and the gate electrode as an ion implantation mask to form a drain region wherein the ion implantation process is performed at a tilt corresponding to the slope of the isolation layer. A high-density ion implantation process is performed by using the spacer and the gate electrode as an ion implantation mask to form a source region wherein the ion implantation process is performed at a tilt corresponding to the slope of the isolation layer. The abovementioned ion implantation process can be performed to make uniform the doping depth on the edge of a source/drain region(110a) of the isolation layer so that a junction leakage doesn't exist.