PROCESS FOR ADJUSTING THE STRAIN ON THE SURFACE OR INSIDE A SUBSTRATE MADE OF A SEMICONDUCTOR MATERIAL

摘要

A method for adjusting strain at a semiconductor substrate is provided to locally adjust the strain in one or several layers formed on the substrate. At least one region(21,22) of a strained layer(2), of where strain is to be adjusted, is identified. Elements are implanted into at least one of the identified regions in the strained layer in an amount sufficient to cure or reduce defects when subjected to elevated temperatures. A substrate(1) and the strained layer are annealed by heating to a temperature for a time sufficient to reduce or cure crystalline defects in the one or more regions of the strained layer including the implanted elements. The step of implanting a chemical element is conducted with the implantation energy adapted as a function of depth of the identified region.