| 摘要 |
A method for fabricating a semiconductor device is provided to form a Cu diffusion stop layer at inexpensive cost and increase adhesive force between an interlayer dielectric and the diffusion stop layer. Interlayer dielectrics(120,210,215) are formed on a substrate, and then a via hole and a trench are formed on the interlayer dielectrics. A TiN layer is formed on the via hole and the trench, and diffusion stop layers(130,230) for a TiSiN layer are formed on the TiN layer, through plasma vapor deposition. A copper seed layer(245) is formed on the diffusion stop layer, and then a via plug and a metallization(140) are formed on the via hole and the trench using the copper seed layer.
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