| 摘要 |
An electro luminescence device is provided to increase the surface roughness of a cathode by doping one of Si and Ni on the cathode. An electro luminescence device includes a glass substrate(101), an organic electro luminescent layer(112), a pixel electrode(308), a common electrode(115), a thin film transistor(A), an electron injection layer(110), an electron transport layer(111), a hole transport layer(113), and a hole injection layer(114). A pixel is defined on an area where the pixel electrode(308) and the common electrode(115) intersect on the glass substrate(101). The thin film transistor(A) is formed on the glass substrate(101), and is electrically connected to the pixel electrode(308). The electron injection layer(110) and the electron transport layer(111) are formed between the pixel electrode(308) and the organic electro luminescent layer(112). The hole transport layer(113) and the hole injection layer(114) are formed between the organic electro luminescent layer(112) and the common electrode(115). The pixel electrode(308) is electrically connected to a drain of the thin film transistor(A), and one or both of Si and Ni are doped on the pixel electrode(308).
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