发明名称 |
Semiconductor light-emitting device having annular shape light emitting region and current blocking layer |
摘要 |
A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.
|
申请公布号 |
US7247985(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20040969015 |
申请日期 |
2004.10.21 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KANEKO KAZUAKI;UMEDA HIROSHI;SASAKI KAZUAKI;NAKAMURA JUNICHI |
分类号 |
H01J1/62;H01L33/14;H01L33/30;H01L33/38;H01L33/40;H01L33/62;H05B33/00;H05B33/14 |
主分类号 |
H01J1/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|