FARADAY DEVICE OF ION IMPLANTATION SYSTEM AND METHOD FOR SUPPLYING BAIS VOLTAGE OF FARADAY THEREOF

摘要

A faraday device of an ion implantation apparatus is provided to prevent the count error of an ion quantity by adjusting the suppression bias voltage according to the variation quantity of ion energy. A faraday cup(24) measures the dosage according to the implantation of ions, installed in the rear part of a disk on which a wafer(10) is mounted. A current meter(25) measures the dosage implanted into the faraday cup by using beam current. A controller generates different suppression bias voltage controlling signals according to an ion implantation energy band. A via voltage adjusting part(32) generates a reverse voltage for suppressing secondary electrons corresponding to an ion energy band in response to the suppression bias voltage controlling signal of the controller.