| 摘要 |
The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 mum or less, and whose volume resistivity is 10<SUP>8</SUP>-10<SUP>11 </SUP>Omegacm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.
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