| 摘要 |
<p>A method for manufacturing a phase shift mask is provided to prevent pattern defect due to proximity effect by reducing optical energy difference between a cell region whose pattern is dense and a Peri region whose pattern is thin. A lower layer(130) and an upper layer(140), and a chrome(170) are sequentially formed on an upper portion of a transparent substrate(100). A first photoresist layer pattern defining a first exposure mask pattern is formed on an upper portion of the chrome. The chrome layer, the upper layer, and the lower layer are etched by using the first photoresist layer pattern as an etching mask to form the first exposure mask pattern comprised of a chrome layer pattern, an upper layer pattern, and a lower layer pattern and to remove the photoresist pattern. A second photoresist layer pattern is formed to expose the upper layer pattern on a Peri region. The exposed upper layer pattern is removed by using the second photoresist layer pattern to form a second exposure mask pattern and to remove the photoresist layer pattern.</p> |
