| 摘要 |
A method for fabricating a semiconductor device is provided to improve the production yield of the semiconductor device by allowing a moving speed of an etchant nozzle to be dependent on a film thickness distribution. An insulating film(11) for forming sidewall insulating films of a gate electrode is deposited on a main surface of a semiconductor wafer(1). Then, the treatment for equalizing the film thickness distribution of the insulating film is performed. In this treatment, the semiconductor wafer is fixed onto a spin stage(32) of an etching apparatus(31) and rotated. An etchant(37) is supplied from an etchant nozzle(36) onto the main surface of the rotated semiconductor wafer while the etchant nozzle is moved from the peripheral side of the main surface of the semiconductor wafer to its central side. The moving speed of the etchant nozzle is controlled depending on the film thickness distribution of the insulating film so that the moving speed in a region with a larger rate of film thickness of the insulating film in a radial direction of the semiconductor wafer is smaller than that in a region with a smaller rate of film thickness.
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