发明名称 Semiconductor device and method for fabricating the semiconductor device
摘要 A semiconductor device has a semiconductor substrate, at least a first and second rewiring device on a first surface of the semiconductor substrate for the provision of an electrical contact-connection of the semiconductor substrate, and a tapering, continuous opening from a first surface to a second, opposite surface of the semiconductor substrate. At least a third and fourth rewiring device is disposed on the second surface of the semiconductor substrate and a patterned metallization on the side areas of the opening for the separate contact-connection of the first and at least the second rewiring device.
申请公布号 US7247948(B2) 申请公布日期 2007.07.24
申请号 US20040836143 申请日期 2004.04.30
申请人 INFINEON TECHNOLOGIES AG 发明人 HEDLER HARRY;IRSIGLER ROLAND;MEYER THORSTEN
分类号 H01L21/82;H01L23/48;H01L25/065 主分类号 H01L21/82
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