| 摘要 |
A method for fabricating a semiconductor device is provided to solve the failure of burying a metallization by widening an opening of a contact hole in comparison with an inner portion of the contact hole. An interlayer dielectric is formed on a substrate, and then a portion of the interlayer dielectric etched to form a first contact hole. A spacer(306a) is formed on both sides of the first contact hole, and simultaneously, the interlayer dielectric is etched to form a second contact hole(311). A tungsten plug is formed to bury a portion of the contact hole having an opening widened by the first and second contact holes. An aluminum metallization is formed on the tungsten plug.
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