发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A semiconductor device is provided to easily blow a fuse connected to a defective cell in a repair process when overcurrent flows through the fuse by making a fuse formed on a gate conductive layer pattern in a fuse region have a smaller area than that of a silicide layer formed in a cell array region. Gate conductive layer patterns(120) are formed on a substrate(110) in a cell array region(B) and a fuse region(A). A silicide layer(150b) is formed on the gate conductive layer pattern in the cell array region. A fuse(150a) is formed on the gate conductive layer pattern in the fuse region, having a smaller section than that of the silicide layer. A spacer(130) can be formed on the lateral surface of the gate conductive layer pattern in the fuse region. The rest of the fuse region except the gate conductive layer can be covered with a silicide preventing layer(140a).
申请公布号 KR20070076046(A) 申请公布日期 2007.07.24
申请号 KR20060004983 申请日期 2006.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JEONG HO;AHN, JONG HYON;LEE, HYE KYOUNG
分类号 H01L21/82 主分类号 H01L21/82
代理机构 代理人
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