发明名称 |
Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
摘要 |
The invention provides a substrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation and which contains a metal oxide having a perovskite structure, a method for manufacturing a substrate for an electronic device, and an electronic device provided with such a substrate for an electronic device. A substrate for an electronic device includes a Si substrate, a buffer layer which is formed by epitaxial growth on the Si substrate and which contains a metal oxide having a NaCl structure, and a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation on the buffer layer and which contains a metal oxide having a perovskite structure. The Si substrate is preferably a (100) substrate or a (110) substrate from which a natural oxidation film is not removed. The buffer layer preferably has an average thickness of 10 nm or less.
|
申请公布号 |
US7247551(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20040968957 |
申请日期 |
2004.10.21 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HIGUCHI TAKAMITSU;IWASHITA SETSUYA;MIYAZAWA HIROMU |
分类号 |
C01G55/00;H01L21/44;C30B23/02;C30B29/16;C30B29/24;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8246;H01L27/105;H01L29/04;H01L41/08;H01L41/09;H01L41/18;H01L41/22 |
主分类号 |
C01G55/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|