发明名称 |
Method for fabricating a capacitor using a metal insulator metal structure |
摘要 |
A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.
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申请公布号 |
US7247572(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20030743573 |
申请日期 |
2003.12.22 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JO BO-YEOUN |
分类号 |
H01L21/302;H01L27/108;H01L21/02;H01L21/311;H01L21/318;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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