发明名称 Method for fabricating a capacitor using a metal insulator metal structure
摘要 A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.
申请公布号 US7247572(B2) 申请公布日期 2007.07.24
申请号 US20030743573 申请日期 2003.12.22
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 JO BO-YEOUN
分类号 H01L21/302;H01L27/108;H01L21/02;H01L21/311;H01L21/318;H01L21/3213 主分类号 H01L21/302
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