| 摘要 |
An apparatus and a method for processing a substrate are provided to completely remove a resist film using a nozzle having a lower round surface which allows sulfuric acid and hydrogen peroxide to be mixed and provided onto a substrate without loosing an activity of peroxosulfuric acid. A substrate processing apparatus includes a rotating table and a nozzle(33). A semiconductor wafer(W) is supported on the rotating table. The nozzle is arranged to face the semiconductor wafer, and allows sulfuric acid and hydrogen peroxide to be mixed so as to provide the mixed solution of sulfuric acid and hydrogen peroxide onto the semiconductor wafer. The nozzle includes a main body(34), first and second fluid supply tubes(37,38), first and second slits(41,42) and a lower round surface(39). The main body is elongated along a radial direction of the semiconductor wafer. The first slit is formed along one lengthwise direction of one side surface of the main body while the second slit is formed along another lengthwise direction of the other side surface of the main body. The first and the second fluid supply tubes supply sulfuric acid and hydrogen peroxide to the first and the second slits, respectively. The lower round surface located on a lower end of the main body allows the one side surface and the other side surface to be continuous in a lower end of the main body. Sulfuric acid and hydrogen peroxide supplied through the first and the second slits are run down along the one side surface and the other side surface so that they are mixed at the lower round surface, and the mixed solution of sulfuric acid and hydrogen peroxide is supplied onto the semiconductor wafer.
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