发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
|
申请公布号 |
US7247891(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20040970026 |
申请日期 |
2004.10.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KANDA ATSUHIKO;TANAKA TSUYOSHI;UEMOTO YASUHIRO;HIROSE YUTAKA;MURATA TOMOHIRO |
分类号 |
H01L21/331;H01L29/739;H01L21/335;H01L21/338;H01L27/146;H01L29/20;H01L29/737;H01L29/778;H01L29/812;H01L31/0328;H01S5/042;H01S5/323;H01S5/343 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|