| 摘要 |
A method for manufacturing a semiconductor device using a self-aligned contact etch is provided to prevent loss of a gate hard mask nitride layer by etching a portion of an interlayer dielectric and completely opening a surface of a semiconductor substrate only through an etching-back of a buffer material. Plural gate lines(22,23,24,25) are formed on an upper portion of a semiconductor substrate(21). A spacer nitride layer(26) is formed on the whole surface including the gate lines. An interlayer dielectric(27) is formed on the spacer nitride layer until it gap-fills the gate lines. The interlayer dielectric is planarized. The interlayer between the gate lines is etched in a portion of a depth. A buffer material is formed on the etched interlayer dielectric. Etching selectivity for the spacer nitride layer of the buffer material is high. The buffer material is etched back to form a landing plug contact hole(30) for opening the surface of the semiconductor substrate between the gate lines.
|
