III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A III-group nitride semiconductor light emitting device is provided to obtain low contact resistance and increase external quantum efficiency by including a second light transmitting electrode layer having a first light transmitting electrode layer with high crystallinity and a protrusion. A III-group nitride semiconductor light emitting device includes a plurality of nitride semiconductor layers having an active layer(30) for generating light by recombination of electrons and holes. The plurality of nitride semiconductor layers includes a first nitride semiconductor layer of a first conductivity type positioned under the active layer and a second nitride semiconductor layer of a second conductivity type different from the first conductivity type. The III-group nitride semiconductor light emitting device includes a first light transmitting electrode layer(50) formed on the plurality of nitride semiconductor layers and a second light transmitting electrode layer(51) adjoining the first light transmitting electrode layer. The second light transmitting electrode layer includes a protrusion(1100), formed in a different deposition condition from that of the first light transmitting electrode layer. The first light transmitting electrode layer has a first deposition rate and the second light transmitting electrode layer has a second deposition rate wherein the second deposition rate is higher than the first deposition rate.