Manufacturing method of semiconductor device having trench isolation prevented from divot,申请号KR20050066426-传众专利搜索

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发明名称	Manufacturing method of semiconductor device having trench isolation prevented from divot
摘要
申请公布号	KR100741876(B1)	申请公布日期	2007.07.23
申请号	KR20050066426	申请日期	2005.07.21
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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