METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to form a metallization having low resistance by forming a polycrystal silicon layer and then converting it into a metal silicide layer. An interlayer dielectric(43) having a contact hole is formed on a semiconductor substrate(41), and then a contact plug(45) is formed in the contact hole. A polycrystal silicon layer wiring(46) is formed on the interlayer dielectric. A metal layer(47) and a capping layer(48) consisting of a Ti/TiN layer are formed on the interlayer dielectric. The substrate with the capping layer is annealed to convert the polycrystal silicon layer wiring into a metal silicide layer wiring.