| 摘要 |
A III-group nitride semiconductor light emitting device is provided to easily form a semiconductor layer having a rough surface by including a nitride semiconductor layer of an n-type conductivity type. A III-group nitride semiconductor light emitting device includes a plurality of nitride semiconductor layers having an active layer for generating light by recombination of electrons and holes. The plurality of nitride semiconductor layers include a p-type nitride semiconductor layer grown on the active layer and a nitride semiconductor layer having a rough surface grown on the p-type nitride semiconductor layer. The nitride semiconductor layer having the rough surface has an n-type conductivity type, capable of being made of one selected from a group of Si and Sn.
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