| 摘要 |
<p>Provided are a resist composition capable of simply and efficiently forming omitted fine resist pattern without regard to orientation and density difference of the resist pattern and types of materials for thickening of the resist pattern, a method for forming a resist pattern using the composition, a semiconductor device and a method for manufacturing the device. The resist composition includes at least alicyclic compound having a melting point of 90~150°C and a resin. The resin is at least one selected from aclylic resist, cyclo-olefinic maleic anhydride resist and cyclo-olefinic resist. The alicyclic compound has an alicyclic base structure including at least one of adamantine or norbornane. The resist composition has 0.01 to 5 wt% of an alicyclic compound based on the weight of the resin. The method for forming a resist pattern includes the steps of forming a resist pattern using the resist composition and applying a material for resist pattern thickening to cover the formed resist pattern. The material for resist pattern thickening includes water-soluble or alkali-soluble resin.</p> |
