Production of monocrystalline material on a dielectric material, comprises forming a partially crystalline first layer, and forming an amorphous/partially crystalline second layer of first material on the partially crystalline first layer

摘要

#CMT# #/CMT# The production of monocrystalline material on a dielectric material (2), comprises forming a partially crystalline first layer (4) having the first material on the portion of the third material surface by remote plasma-enhanced chemical vapor deposition, forming an amorphous/partially crystalline second layer of first material on the partially crystalline first layer of first- and second material located around the opening by plasma enhanced chemical vapor deposition/low energy plasma enhanced chemical vapor deposition, and annealing of recrystallization of the first material. #CMT# : #/CMT# The production of monocrystalline material on a dielectric material (2), comprises forming a partially crystalline first layer (4) having the first material on the portion of the third material surface by remote plasma-enhanced chemical vapor deposition, forming an amorphous/partially crystalline second layer of first material on the partially crystalline first layer of first- and second material located around the opening by plasma enhanced chemical vapor deposition/low energy plasma enhanced chemical vapor deposition, and annealing of recrystallization of the first material. The second material has an opening exposed to a portion of third monocrystalline material surface. The first material has germanium. The third material has silicon. The second material has an oxide or a nitride of third material. The formation of amorphous/partially crystalline second layer comprises chemico-mechanical polishing of the second material surface and/or the first layer of the first material surface. The formation of the partially crystalline first layer comprises forming a layer comprising second material, on a part of the third material moncrystalline surface. The deposition of the dielectric layer encapsulates the second layer of the first material formed at the annealing stage. #CMT#USE : #/CMT# Useful for producing monocrystalline material on a dielectric material. #CMT#ADVANTAGE : #/CMT# The production of monocrystalline material on a dielectric material is simple and cost effective. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The diagram shows a production of a monocrystalline material on a dielectric material: 2 : Dielectric layer; 4 : Partially crystalline layer.