| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a super luminescent diode capable of emitting a high-output super luminescent light having a central wavelength of a range of 0.95 to 1.2 μm and an undistorted cross-sectional shape, and having a long element life. <P>SOLUTION: The super luminescent diode 11 is constituted of: an optical waveguide 12 formed on an n-type GaAs substrate, and having an InGaAs active layer 105 that emits light having a central wavelength of a range of 0.95 to 1.2 μm; and a window member 13 arranged on the rear emitting end face side of the optical waveguide 12, having a larger energy gap and a smaller refractive index as compared with an active layer material, and having a window area layer 111 formed by a p-type GaAs which lattice-matches with the GaAs substrate. Consequently, the diode can obtain the InGaAs active layer 105 prevented from being deteriorated and capable of emitting light having the central wavelength of the range of 0.95 to 1.2 μm, and the p-type GaAs window area layer 111 having fine crystal film quality. <P>COPYRIGHT: (C)2007,JPO&INPIT |
