| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a vertical trench gate structure for improving the device integration degree, and also to provide its manufacturing method. SOLUTION: The semiconductor device includes: second conductivity-type epitaxial layers formed in a first conductivity-type substrate in which an active region and an isolation region are partitioned; trenches formed in the isolation region; a first conductivity-type first region formed inside each epitaxial layer on both sides of each trench; an isolation film formed at a fixed depth in each trench; a gate insulating film formed along both side faces at the upper part of each trench; a gate electrode formed inside the upper part of each trench; a body region formed inside the active region; a source electrode formed on the body region; a source region formed at the upper part of the body region on both sides of the gate electrode; and a drain electrode formed on the rear face of the first conductivity-type substrate. COPYRIGHT: (C)2007,JPO&INPIT
|
