发明名称 |
METHOD OF FORMING A PHASE-CHANGEABLE STRUCTURE |
摘要 |
In one embodiment, a phase-changeable structure can be formed by forming a phase-changeable layer on the lower electrode, forming a conductive layer on the phase-changeable layer, etching the conductive layer using a first etching material to form an upper electrode and etching the phase-changeable layer using a second etching material to form a phase-changeable pattern. The first etching material can include a first component containing fluorine. The second etching material does not contain chlorine.
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申请公布号 |
US2007166870(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20070623890 |
申请日期 |
2007.01.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM YOUNG-SOO;HWANG JAE-SEUNG;KIM HYUN-CHUL;BAE JUN-SOO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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