| 摘要 |
The present invention provides an array ( 20 ) of magnetoresistive memory elements ( 10 ) provided with at least one data retention indicator device ( 50 ). The at least one data retention indicator device ( 50 ) comprises a first magnetic element ( 51 ) and a second magnetic element ( 52 ) each having a pre-set magnetisation direction, the pre-set magnetisation direction of the first and second magnetic elements ( 51, 52 ) being different from each other. The first and second magnetic elements ( 51, 52 ) are suitable for aligning their magnetisation direction with magnetic field lines of an externally applied magnetic field exceeding a detection threshold value. According to the present invention, a parameter of the at least one data retention indicator device ( 50 ) is chosen so as to set the detection threshold value of the externally applied magnetic field to be detected. The at least one data retention indicator device ( 50 ) has a state or an output indicative of exposure of the magnetoresistive memory elements ( 10 ) of the array ( 20 ) to said externally applied magnetic field.
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