发明名称 Nonvolatile semiconductor memory device
摘要 A nonvolatile semiconductor device is configured so that a load circuit applying voltage to a variable resistive element is provided electrically connecting in series to the variable resistive element, a load resistive characteristic of the load circuit can be switched between two different characteristics. The two load resistive characteristics are selectively switched depending on whether a resistive characteristic of the variable resistive element transits from low resistance state to high resistance state, or vice versa, voltage necessary for transition from one of the two resistive characteristics to the other is applied by applying writing voltage to a serial circuit of the variable resistive element and load circuit. After the resistive characteristic of the variable resistive element transits from one to the other, voltage applied to the variable resistive element does not allow a resistive characteristic to return from the other to one depending on the selected load resistive characteristic.
申请公布号 US2007165442(A1) 申请公布日期 2007.07.19
申请号 US20060647329 申请日期 2006.12.29
申请人 HOSOI YASUNARI;AWAYA NOBUYOSHI;INOUE ISAO 发明人 HOSOI YASUNARI;AWAYA NOBUYOSHI;INOUE ISAO
分类号 G11C17/00 主分类号 G11C17/00
代理机构 代理人
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