发明名称 Semiconductor memory device and methods thereof
摘要 A semiconductor memory device and methods thereof are provided. The example semiconductor memory device may include a memory cell configured to store data, a storage unit configured to store at least one data pattern, a data output circuit configured to output the stored data during a first type of read operation and configured to output the at least one data pattern during a second type of read operation and an output control circuit for controlling the data output circuit such that the memory cell is not accessed during read operations of the second type. A first example method may include storing at least one data pattern in a storage unit, outputting the stored data within the memory cell in response to a first type of read operation and outputting the at least one data pattern in the storage unit in response to a second type of read operation and blocking access to the memory cell during read operations of the second type. A second example method may include storing at least one fixed data pattern within a storage unit, the at least one fixed data pattern only accessible during read operations of a first type, storing normal data within at least one memory cell, the normal data only accessible during read operations of a second type and blocking access to the at least one memory cell during an execution of read operations of the second type.
申请公布号 US2007168631(A1) 申请公布日期 2007.07.19
申请号 US20060589179 申请日期 2006.10.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HEO NAK-WON
分类号 G06F12/14 主分类号 G06F12/14
代理机构 代理人
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