| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which two semiconductor structures are laminated, and which is suitable for a high frequency with wiring length as the shortest. <P>SOLUTION: The second semiconductor structure 1b whose size is smaller than that of the first semiconductor structure 1a is laminated on the center of the upper face of the first semiconductor structure 1a. An insulating film 13 is arranged on the first semiconductor structure 1a at the periphery of the second semiconductor structure 1b. Solder balls 14a and 14b are disposed on columnar electrodes 10a and 10b of the first and second semiconductor structures 1a and 1b. Electric connection wiring is mainly set to be a thickness direction of the first and second semiconductor structures 1a and 1b. Thus, the device is adapted to the high frequency with wiring length as the shortest. <P>COPYRIGHT: (C)2007,JPO&INPIT |
