| 摘要 |
PROBLEM TO BE SOLVED: To obtain an epoxy resin sealed IGBT module in which miniaturization, high output, high reliability, and long lifetime are attained. SOLUTION: In the power semiconductor module, a ceramics substrate, to which an Si chip is bonded, is soldered to a copper base, two rows or more of trench are formed in the surface of the copper base around the ceramics substrate, the entire region to be sealed is coated uniformly with polyamide resin with a thickness of 10μm or smaller and then transfer-molding of epoxy resin is carried out. Furthermore, connectors employed are all female connectors and are exposed only to the upper surface of the sealing region, only the inside of the upper surface of copper base are made to serve as the sealing region, and a plurality of attaching holes are provided in the copper base on the outside of the sealing region. COPYRIGHT: (C)2007,JPO&INPIT |
