| 摘要 |
A memory structure, a memory device and a manufacturing method thereof are provided. First, a substrate is provided and a dielectric layer is formed over the substrate. Then, a pattern is formed in the dielectric layer. An amorphous silicon layer is formed in the pattern and over the dielectric layer. The amorphous silicon layer is patterned to form an electrode over the pattern. Then, a spacer is formed on the sidewall of the electrode. A selective hemispherical grains (HSGS) layer is formed over the surface of the electrode and the surface of the spacer. |
