| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light receiving element having improved high-speed response properties, and to provide a manufacturing method of the semiconductor light receiving element suited for mass productivity. <P>SOLUTION: The semiconductor light receiving element comprises an n-type InGaAs light reception layer 3 positioned on a semiconductor substrate 1 while interposing an n-type InGaAs buffer layer 2, an InP window layer 4 on the light reception layer 3, a passivation film 5 positioned on the window layer 4, a p-type region 8 formed over the window layer 4 and the light reception layer 3, a p-type section electrode 7 in ohmic contact with the light reception layer 3 at a p-type region over the light reception layer 3 through the window layer 4 at the p-type region 8, and an n-type section electrode 33 in ohmic contact with either the n-type buffer layer 2 or the n-type light reception layer 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
