| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride LED element and its process for fabrication, capable of simplifying an overall fabrication process for elements and improving adhesion performance between a protective film and an electrode, preventing defective adhesion. <P>SOLUTION: The gallium nitride LED element comprises a substrate 100, an n-type gallium nitride layer 111 formed on the substrate, an active layer 113 formed in a specified region on the n-type gallium nitride layer, a p-type gallium nitride layer 115 formed on the active layer, a transparent electrode 120 formed on the p-type gallium nitride layer, a p-type electrode 140 formed on the transparent electrode, an n-type electrode 130 formed on such n-type gallium nitride layer as no active layer is formed, and a protective film 150 consisting of a transparent layer 200 which is formed on a resultant between the transparent electrode and the n-type electrode and is subjected to plasma oxidation. The ashing process may be employed instead of plasma oxidation. <P>COPYRIGHT: (C)2007,JPO&INPIT |
