METAL GATE ELECTRODE AND HIGH-PERFORMANCE CIRCUIT HAVING POLYGATE ELECTRODE

摘要

PROBLEM TO BE SOLVED: To prevent the depletion of the gate polysilicon of a CMOS by a gate electrode structure composed of a metal dielectric stack containing a large volume of potassium.

SOLUTION: A semiconductor structure is provided by including an n-FET device and a p-FET device. At least either of the devices includes a gate electrode stack having a thin film of a silicon-containing electrode, i.e., polysilicon electrode and a first metal on the silicon-containing electrode. The other of the devices includes a gate electrode stack not having a thin film of a silicon-containing electrode but at least having a first metal gate.

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