| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of contriving the improvement of the reproducibility of processes and the reduction of on-state resistance and a field value in a gate insulating film at a withstanding voltage. <P>SOLUTION: The semiconductor device has an n-type SiC drift layer 5; p-type SiC base regions 7 selectively formed on the n-type SiC drift layer 5; an n-type depression region 9 formed on the n-type SiC drift layer 5; n-type SiC source regions 11 formed on the surface layer of the p-type SiC base regions 7; and a gate insulating film 13 and a gate electrode 15 which are formed across upper parts of n-type SiC source regions 11, the p-type SiC base regions 7, and the n-type depression region 9. In this case, the n-type depression region 9 is formed so as to have doping density higher than that of the n-type SiC drift layer 5 while the depression region 9 is formed so as to have uniform density with respect to the longitudinal direction and the lower layer side (9c) is formed so as to have density higher than those of the upper layers side (9a, 9b) with respect to the up-and-down direction. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
