发明名称 |
Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter |
摘要 |
The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
|
申请公布号 |
US2007163635(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20070651086 |
申请日期 |
2007.01.09 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NASUNO YOSHIYUKI;KOHAMA NORIYOSHI;NISHIMURA KAZUHITO |
分类号 |
H01L31/00;H01B1/10;H01L31/068 |
主分类号 |
H01L31/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|