发明名称 |
CMP VERFAHREN UNTER VERWENDUNG VON AMPHIPHILEN NICHTIONISCHEN TENSIDEN |
摘要 |
The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier. |
申请公布号 |
DE60314274(D1) |
申请公布日期 |
2007.07.19 |
申请号 |
DE2003614274 |
申请日期 |
2003.09.29 |
申请人 |
CABOT MICROELECTRONICS CORP. |
发明人 |
SCHROEDER, DAVID J.;MOEGGENBORG, KEVIN J.;CHOU, HOMER;CHAMBERLAIN, JEFFREY P.;HAWKINS, JOSEPH D;CARTER, PHILLIP W. |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;H01L21/312;H01L21/321 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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