| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which performs non-selective etching or selective etching for a plurality of insulating films on a semiconductor substrate by using etchant which uses neither organic acid nor organic solvent. SOLUTION: Etchant is aqueous solution of HF which dissociates to F<SP>-</SP>and HF<SB>2</SB><SP>-</SP>in aqueous solution. The selectivity (etching rate) of an SiN film to a thermal oxide SiO<SB>2</SB>film is set to about 1 by controlling concentration and temperature of the HF aqueous solution, and the aqueous solution is used both in non-selective etching process and selective etching process of the SiN film to the thermal oxide SiO<SB>2</SB>film. COPYRIGHT: (C)2007,JPO&INPIT
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